A Vacuum Transistor Based on Field−Assisted Thermionic Emission from a Multiwalled Carbon Nanotube

Vacuum triodes have been scaled down to the microscale on a chip by microfabrication technologies be vacuum transistors. Most of reported devices are based field electron emission, which suffer from problems unstable poor uniformity, and high requirement for operating vacuum. Here, overcome these problems, transistor field−assisted thermionic emission individual carbon nanotubes is proposed fabricated using technologies. The nanotube exhibits an ON/OFF current ratio as 104 subthreshold slope ~4 V·dec−1. gate controllability found strongly dependent distance between collector electrodes emitter, device with 1.5 μm shows better than that 0.5 μm. Benefiting mechanism, electric required in our about one order magnitude smaller surface emitters much less gas molecule absorption cold emitters. These expected helpful improving stability uniformity devices.